21 Facts About Boron nitride

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN.

Boron nitride exists in multiple forms that differ in the arrangement of the boron and nitrogen atoms, giving rise to varying bulk properties of the material.

Amorphous form of boron nitride is non-crystalline, lacking any long-distance regularity in the arrangement of its atoms.

Cubic boron nitride has a crystal structure analogous to that of diamond.

Wurtzite form of boron nitride has the same structure as lonsdaleite, a rare hexagonal polymorph of carbon.

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Boron nitride can be doped p-type with beryllium and n-type with boron, sulfur, silicon or if co-doped with carbon and nitrogen.

The parts are made from boron nitride powders adding boron oxide for better compressibility.

Thin films of boron nitride can be obtained by chemical vapor deposition from boron trichloride and nitrogen precursors.

Boron nitride reacts with nitrides of lithium, alkaline earth metals and lanthanides to form nitridoborate compounds.

Synthesis of c-BN uses same methods as that of diamond: cubic boron nitride is produced by treating hexagonal boron nitride at high pressure and temperature, much as synthetic diamond is produced from graphite.

Materials with cubic boron nitride crystals are often used in the tool bits of cutting tools.

Atomically thin boron nitride is one of the strongest electrically insulating materials.

Atomically thin boron nitride has one of the highest thermal conductivity coefficients among semiconductors and electrical insulators, and its thermal conductivity increases with reduced thickness due to less intra-layer coupling.

Atomically thin boron nitride has much better oxidation resistance than graphene.

Atomically thin boron nitride has been found to have better surface adsorption capabilities than bulk hexagonal boron nitride.

Atomically thin hexagonal boron nitride is an excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D material-based electronic and photonic devices.

Nevertheless, the Raman intensity of G band of atomically thin boron nitride can be used to estimate layer thickness and sample quality.

Boron nitride tubules were first made in 1989 by Shore and Dolan This work was patented in 1989 and published in 1989 thesis and then 1993 Science.

Boron nitride nanotubes were predicted in 1994 and experimentally discovered in 1995.

Boron nitride aerogel is an aerogel made of highly porous BN.

Boron nitride is reported to show weak fibrogenic activity, and to cause pneumoconiosis when inhaled in particulate form.