CIGS panel is one of three mainstream thin-film photovoltaic technologies, the other two being cadmium telluride and amorphous silicon.
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CIGS panel is one of three mainstream thin-film photovoltaic technologies, the other two being cadmium telluride and amorphous silicon.
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However, as all of these technologies normally use high-temperature deposition techniques, the best performance normally comes from cells deposited on glass, even though advances in low-temperature deposition of CIGS panel cells have erased much of this performance difference.
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In 2013, the market share of CIGS panel alone was about 2 percent and all thin-film technologies combined fell below 10 percent.
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CIGS panel cells continue being developed, as they promise to reach silicon-like efficiencies, while maintaining their low costs, as is typical for thin-film technology.
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Prominent manufacturers of CIGS panel photovoltaics were the now-bankrupt companies Nanosolar and Solyndra.
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CIGS panel is a I-III-VI2 compound semiconductor material composed of copper, indium, gallium, and selenium.
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When CIGS panel films are In rich the film's surface layer forms an ordered defect compound with a stoichiometry of Se.
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Recombination in CIGS panel has been suggested to be dominated by non-radiative processes.
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CIGS panel is mainly used in the form of polycrystalline thin films.
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Unlike conventional crystalline silicon cells based on a homojunction, the structure of CIGS panel cells is a more complex heterojunction system.
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The record efficiencies for thin film CIGS panel cells are slightly lower than that of CIGS panel for lab-scale top performance cells.
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In 2008, CIGS panel efficiency was by far the highest compared with those achieved by other thin film technologies such as cadmium telluride photovoltaics or amorphous silicon .
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