Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics.
12 Facts About Dawon Kahng
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Dawon Kahng is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959.
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Dawon Kahng then invented the floating-gate MOSFET with Simon Min Sze in 1967.
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Dawon Kahng was inducted into the National Inventors Hall of Fame in 2009.
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Dawon Kahng was born on May 4,1931, in Keijo, Chosen.
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Dawon Kahng studied physics at Seoul National University in South Korea, and immigrated to the United States in 1955 to attend Ohio State University, where he received a doctorate in electrical engineering in 1959.
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Dawon Kahng was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey, and he invented MOSFET, which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959.
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Dawon Kahng invented floating-gate non-volatile memory in 1967, and proposed that the floating gate of an MOS semiconductor device could be used for the cell of a reprogrammable ROM, which became the basis for EPROM, EEPROM and flash memory technologies.
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Dawon Kahng conducted research on ferro-electric semiconductors and luminous materials, and made important contributions to the field of electroluminescence.
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Dawon Kahng was a recipient of the Stuart Ballantine Medal of the Franklin Institute and the Distinguished Alumnus Award of the Ohio State University College of Engineering.
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Dawon Kahng died of complications following emergency surgery for a ruptured aortic aneurysm in 1992.
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In 2009, Dawon Kahng was inducted into the National Inventors Hall of Fame.