10 Facts About FET

Shockley initially attempted to build a working FET, by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states, the dangling bond, and the germanium and copper compound materials.

However, the JFET still had issues affecting junction transistors in general.

Foundations of MOSFET technology were laid down by the work of William Shockley, John Bardeen and Walter Brattain.

FET envisioned it as a form of memory, years before the floating gate MOSFET.

Breakthrough in FET research came with the work of Egyptian engineer Mohamed Atalla in the late 1950s.

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The MOSFET largely superseded both the bipolar transistor and the JFET, and had a profound effect on digital electronic development.

The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses.

The MOSFET thus became the most common type of transistor in computers, electronics, and communications technology .

The FET is said to be in saturation mode; although some authors refer to it as active mode, for a better analogy with bipolar transistor operating regions.

Channel of a FET is doped to produce either an n-type semiconductor or a p-type semiconductor.