10 Facts About FET


Shockley initially attempted to build a working FET, by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states, the dangling bond, and the germanium and copper compound materials.

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However, the JFET still had issues affecting junction transistors in general.

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Foundations of MOSFET technology were laid down by the work of William Shockley, John Bardeen and Walter Brattain.

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FET envisioned it as a form of memory, years before the floating gate MOSFET.

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Breakthrough in FET research came with the work of Egyptian engineer Mohamed Atalla in the late 1950s.

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The MOSFET largely superseded both the bipolar transistor and the JFET, and had a profound effect on digital electronic development.

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The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses.

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The MOSFET thus became the most common type of transistor in computers, electronics, and communications technology .

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The FET is said to be in saturation mode; although some authors refer to it as active mode, for a better analogy with bipolar transistor operating regions.

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Channel of a FET is doped to produce either an n-type semiconductor or a p-type semiconductor.

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