13 Facts About GaN

For example, GaN is the substrate which makes violet laser diodes possible, without requiring nonlinear optical frequency-doubling.

GaN can be doped with silicon or with oxygen to n-type and with magnesium to p-type.

However, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle.

The wide band-gap behavior of GaN is connected to specific changes in the electronic band structure, charge occupation and chemical bond regions.

The large band gap means that the performance of GaN transistors is maintained up to higher temperatures than silicon transistors because it lessens the effects of thermal generation of charge carriers that are inherent to any semiconductor.

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GaN-based violet laser diodes are used to read Blu-ray Discs.

GaN transistors are suitable for high frequency, high voltage, high temperature and high efficiency applications.

GaN is efficient at transferring current, and this ultimately means that less energy is lost to heat.

GaN HEMTs have been offered commercially since 2006, and have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation.

GaN-based MOSFET and MESFET transistors offer advantages including lower loss in high power electronics, especially in automotive and electric car applications.

GaN-based electronics has the potential to drastically cut energy consumption, not only in consumer applications but even for power transmission utilities.

In 2019, Lockheed Martin's partner ELTA Systems Limited, developed a GaN-based ELM-2084 Multi Mission Radar that was able to detect and track air craft and ballistic targets, while providing fire control guidance for missile interception or air defense artillery.

Saab already offers products with GaN based radars, like the Giraffe radar, Erieye, GlobalEye, and Arexis EW.