12 Facts About MOS transistor

Metal–oxide–semiconductor field-effect transistor is a type of field-effect transistor, most commonly fabricated by the controlled oxidation of silicon.

Basic principle of the field-effect MOS transistor was first patented by Julius Edgar Lilienfeld in 1925.

Basic principle of this kind of MOS transistor was first patented by Julius Edgar Lilienfeld in 1925.

Structure resembling the MOS transistor was proposed by Bell scientists William Shockley, John Bardeen and Walter Houser Brattain, during their investigation that led to discovery of the transistor effect.

CMOS transistor logic reduces power consumption because no current flows, and thus no power is consumed, except when the inputs to logic gates are being switched.

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Bipolar MOS transistor-based logic does not have such a high fanout capacity.

The JFET and bipolar junction MOS transistor are preferred for accurate matching, higher transconductance and certain temperature characteristics which simplify keeping performance predictable as circuit temperature varies.

The P-MOS transistor switch passes all voltages higher than Vgate - Vtp .

The FETs have their drains and sources connected in parallel, the body of the P-MOS transistor is connected to the high potential and the body of the N-MOS transistor is connected to the low potential .

For voltages between VDD - Vtn and gnd - Vtp, both FETs conduct the signal; for voltages less than gnd - Vtp, the N-MOS transistor conducts alone; and for voltages greater than VDD - Vtn, the P-MOS transistor conducts alone.

Also, the P-MOS transistor is typically two to three times wider than the N-MOS transistor, so the switch will be balanced for speed in the two directions.

The voltage rating of the MOS transistor is a function of the doping and thickness of the N-epitaxial layer, while the current rating is a function of the channel width .