Multiple patterning is a class of technologies for manufacturing integrated circuits, developed for photolithography to enhance the feature density.
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Multiple patterning is a class of technologies for manufacturing integrated circuits, developed for photolithography to enhance the feature density.
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Pitch double-Multiple patterning was pioneered by Gurtej Singh Sandhu of Micron Technology during the 2000s, leading to the development of 30-nm class NAND flash memory.
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Multi-Multiple patterning has since been widely adopted by NAND flash and random-access memory manufacturers worldwide.
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In spacer Multiple patterning, a spacer is a film layer formed on the sidewall of a pre-patterned feature.
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Many approaches for spacer Multiple patterning have been published, all targeting the improved management of the cuts.
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Self-aligned contact and via patterning is an established method for patterning multiple contacts or vias from a single lithographic feature.
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Self-aligned triple Multiple patterning has been considered as a promising successor to SADP, due to its introduction of a second spacer offering additional 2D Multiple patterning flexibility and higher density.
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Multiple patterning entails the use of many processing steps to form a patterned layer, where conventionally only one lithographic exposure, one deposition sequence and one etch sequence would be sufficient.
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Evolution of multiple patterning is being considered in parallel with the emergence of EUV lithography.
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In other words, the multiple patterning is not prohibitive, but more like a nuisance and growing expense.
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