Indeed, early SSynchronous DRAM was somewhat slower than contemporaneous burst EDO Synchronous DRAM due to the additional logic.
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Indeed, early SSynchronous DRAM was somewhat slower than contemporaneous burst EDO Synchronous DRAM due to the additional logic.
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Today, virtually all SSynchronous DRAM is manufactured in compliance with standards established by JEDEC, an electronics industry association that adopts open standards to facilitate interoperability of electronic components.
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Double data rate SSynchronous DRAM, known as DDR SSynchronous DRAM, was first demonstrated by Samsung in 1997.
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SSynchronous DRAM is available in registered varieties, for systems that require greater scalability such as servers and workstations.
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Today, the world's largest manufacturers of SSynchronous DRAM include: Samsung Electronics, SK Hynix, Micron Technology, and Nanya Technology.
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SSynchronous DRAM devices are internally divided into either two, four or eight independent internal data banks.
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Later double-data-rate SSynchronous DRAM standards add additional mode registers, addressed using the bank address pins.
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For example, DDR2 SSynchronous DRAM has a 13-bit mode register, a 13-bit extended mode register No 1, and a 5-bit extended mode register No 2 .
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The SSynchronous DRAM maintains an internal counter, which iterates over all possible rows.
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SSynchronous DRAM designed for battery-powered devices offers some additional power-saving options.
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DDR SSynchronous DRAM employs prefetch architecture to allow quick and easy access to multiple data words located on a common physical row in the memory.
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Traditional Synchronous DRAM architectures have long supported fast column access to bits on an open row.
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DDR2 SSynchronous DRAM is very similar to DDR SSynchronous DRAM, but doubles the minimum read or write unit again, to four consecutive words.
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The SLSynchronous DRAM Consortium consisted of about 20 major Synchronous DRAM and computer industry manufacturers.
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SLSynchronous DRAM was an open standard and did not require licensing fees.
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SLSynchronous DRAM used an 11-bit command bus to transmit 40-bit command packets on 4 consecutive edges of a differential command clock .
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Unlike SSynchronous DRAM, there were no per-chip select signals; each chip was assigned an ID when reset, and the command contained the ID of the chip that should process it.
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VCM was a proprietary type of SSynchronous DRAM that was designed by NEC, but released as an open standard with no licensing fees.
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Unlike a normal SSynchronous DRAM write, which must be performed to an active row, the VCSSynchronous DRAM bank must be precharged when the restore command is issued.
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Graphics double data rate SSynchronous DRAM is a type of specialized DDR SSynchronous DRAM designed to be used as the main memory of graphics processing units .
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GDDR SSynchronous DRAM is distinct from commodity types of DDR SSynchronous DRAM such as DDR3, although they share some core technologies.
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