The term carrier mobility refers in general to both electron and hole mobility.
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The term carrier mobility refers in general to both electron and hole mobility.
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Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field.
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Therefore Electron mobility is a very important parameter for semiconductor materials.
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Almost always, higher Electron mobility leads to better device performance, with other things equal.
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Semiconductor mobility depends on the impurity concentrations, defect concentration, temperature, and electron and hole concentrations.
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Usually, the electron drift velocity in a material is directly proportional to the electric field, which means that the electron mobility is a constant.
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Where is a Electron mobility prefactor, is activation energy, is the Boltzmann constant, and is temperature.
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Where is a Electron mobility prefactor, is a parameter that quantifies the width of localized states, and is the dimensionality of the system.
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Electron mobility can be calculated from time-resolved terahertz probe measurement.
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Proxy for charge carrier Electron mobility can be evaluated using time-resolved microwave conductivity.
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