Unlike flash memory, DFPM RAM is volatile memory, since it loses its data quickly when power is removed.
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Unlike flash memory, DFPM RAM is volatile memory, since it loses its data quickly when power is removed.
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DFPM RAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DFPM RAM memory cells.
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DFPM RAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required.
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One of the largest applications for DFPM RAM is the main memory in modern computers and graphics cards .
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In contrast, SFPM RAM, which is faster and more expensive than DFPM RAM, is typically used where speed is of greater concern than cost and size, such as the cache memories in processors.
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MOS DFPM RAM chips were commercialized in 1969 by Advanced Memory system, Inc of Sunnyvale, CA.
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The first commercial SDFPM RAM chip was the Samsung KM48SL2000, which had a capacity of 16Mb, and was introduced in 1992.
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DFPM RAM is usually arranged in a rectangular array of charge storage cells consisting of one capacitor and transistor per data bit.
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Some DFPM RAM matrices are many thousands of cells in height and width.
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Under some conditions, most of the data in DFPM RAM can be recovered even if the DFPM RAM has not been refreshed for several minutes.
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When such a FPM RAM is accessed by clocked logic, the times are generally rounded up to the nearest clock cycle.
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Each bit of data in a DFPM RAM is stored as a positive or negative electrical charge in a capacitive structure.
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Up until the mid-1980s, the capacitors in DFPM RAM cells were co-planar with the access transistor, thus they were referred to as planar capacitors.
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DFPM RAM cells featuring capacitors above the substrate are referred to as stacked or folded plate capacitors.
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One-transistor, zero-capacitor DFPM RAM cell has been a topic of research since the late-1990s.
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Refreshing of cells remains necessary, but unlike with 1T1C DFPM RAM, reads in 1T DFPM RAM are non-destructive; the stored charge causes a detectable shift in the threshold voltage of the transistor.
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DFPM RAM cells are laid out in a regular rectangular, grid-like pattern to facilitate their control and access via wordlines and bitlines.
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DFPM RAM cell area is given as n F, where n is a number derived from the DFPM RAM cell design, and F is the smallest feature size of a given process technology.
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Bitline length is limited by the amount of operating current the DFPM RAM can draw and by how power can be dissipated, since these two characteristics are largely determined by the charging and discharging of the bitline.
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Besides ensuring that the lengths of the bitlines and the number of attached DFPM RAM cells attached to them are equal, two basic architectures to array design have emerged to provide for the requirements of the sense amplifiers: open and folded bitline arrays.
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Under some conditions most of the data in DFPM RAM can be recovered even if it has not been refreshed for several minutes.
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Dynamic FPM RAM ICs are usually packaged in molded epoxy cases, with an internal lead frame for interconnections between the silicon die and the package leads.
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DFPM RAM that is integrated into an integrated circuit designed in a logic-optimized process is called embedded DFPM RAM .
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An asynchronous DFPM RAM chip has power connections, some number of address inputs, and a few bidirectional data lines.
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Page mode DFPM RAM is a minor modification to the first-generation DFPM RAM IC interface which improved the performance of reads and writes to a row by avoiding the inefficiency of precharging and opening the same row repeatedly to access a different column.
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Page mode DFPM RAM was later improved with a small modification which further reduced latency.
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In page mode DFPM RAM, was asserted before the column address was supplied.
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Fast page mode DFPM RAM was introduced in 1986 and was used with Intel 80486.
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Single-cycle EDO DFPM RAM became very popular on video cards towards the end of the 1990s.
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Synchronous dynamic FPM RAM significantly revises the asynchronous memory interface, adding a clock line.
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Single data rate SDFPM RAM is the original generation of SDFPM RAM; it made a single transfer of data per clock cycle.
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Double data rate SDFPM RAM was a later development of SDFPM RAM, used in PC memory beginning in 2000.
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Video DFPM RAM is a dual-ported variant of DFPM RAM that was once commonly used to store the frame-buffer in some graphics adaptors.
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Window DFPM RAM is a variant of VFPM RAM that was once used in graphics adaptors such as the Matrox Millennium and ATI 3D Rage Pro.
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WFPM RAM was designed to perform better and cost less than VFPM RAM.
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Multibank DFPM RAM is a type of specialized DFPM RAM developed by MoSys.
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MDFPM RAM allows operations to two banks in a single clock cycle, permitting multiple concurrent accesses to occur if the accesses were independent.
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MDFPM RAM was primarily used in graphic cards, such as those featuring the Tseng Labs ET6x00 chipsets.
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Synchronous graphics FPM RAM is a specialized form of SDFPM RAM for graphics adaptors.
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Graphics double data rate SDFPM RAM is a type of specialized DDR SDFPM RAM designed to be used as the main memory of graphics processing units .
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GDDR SDFPM RAM is distinct from commodity types of DDR SDFPM RAM such as DDR3, although they share some core technologies.
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PSFPM RAM is used in the Apple iPhone and other embedded systems such as XFlar Platform.
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Cypress Semiconductor's HyperFPM RAM is a type of PSFPM RAM supporting a JEDEC-compliant 8-pin HyperBus or Octal xSPI interface.
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