12 Facts About IGBT

An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.

IGBT began fabricating the IGBT device with the assistance of Margaret Lazeri at GE in 1978 and successfully completed the project in 1979.

Development of IGBT was characterized by the efforts to completely suppress the thyristor operation or the latch-up in the four-layer device because the latch-up caused the fatal device failure.

The device had an overall similar structure to Baliga's earlier IGBT device reported in 1979, as well as a similar title.

IGBT is characterized by its ability to simultaneously handle a high voltage and a large current.

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The IGBT is the most rugged and the strongest power device yet developed, affording ease of use and so displacing bipolar transistors and even GTOs.

Non-latch-up IGBT operation was ensured, for the first time, for the entire device operation range.

The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.

The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

The IGBT is used in medium to high-power applications like switched-mode power supplies, traction motor control and induction heating.

Detail of the inside of a Mitsubishi Electric CM600DU-24NFH IGBT module rated for, showing the IGBT dies and freewheeling diodes.