10 Facts About MOSFET scaling

Main advantage of a MOSFET scaling is that it requires almost no input current to control the load current, when compared with bipolar transistors.

MOSFET scaling is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer.

The MOSFET scaling operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages.

MOSFET scaling devices are applied in audio-frequency power amplifiers for public address systems, sound reinforcement and home and automobile sound systems.

Largely because of these two factors, the MOSFET scaling has become the most widely used type of transistor in IET.

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Insulator in a MOSFET scaling is a dielectric which can in any event be silicon oxide, formed by LOCOS but many other dielectric materials are employed.

Robert Dennard's work on MOSFET scaling theory was pivotal in recognising that this ongoing reduction was possible.

For example, one approach to size reduction is a scaling of the MOSFET that requires all device dimensions to reduce proportionally.

Dual-gate MOSFET scaling has a tetrode configuration, where both gates control the current in the device.

Depletion-mode MOSFET scaling families include BF960 by Siemens and Telefunken, and the BF980 in the 1980s by Philips, whose derivatives are still used in AGC and RF mixer front-ends.