Nanoimprint lithography is a method of fabricating nanometer scale patterns.
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Nanoimprint lithography is a method of fabricating nanometer scale patterns.
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At this point, nanoimprint lithography has been added to the International Technology Roadmap for Semiconductors for the 32 and 22 nm nodes.
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Nanoimprint lithography has been used to fabricate devices for electrical, optical, photonic and biological applications.
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Optical Nanoimprint lithography requires high powered excimer lasers and immense stacks of precision ground lens elements to achieve nanometer scale resolution.
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Key concerns for nanoimprint lithography are overlay, defects, template patterning and template wear.
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High resolution template patterning can currently be performed by electron beam Nanoimprint lithography or focused ion beam patterning; however at the smallest resolution, the throughput is very slow.
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Key characteristic of nanoimprint lithography is the residual layer following the imprint process.
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Unique benefit of nanoimprint lithography is the ability to pattern 3D structures, such as damascene interconnects and T-gates, in fewer steps than required for conventional lithography.
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Similarly, nanoimprint lithography can be used to replicate 3D structures created using Focused Ion Beam.
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Ultrafast Nanoimprint Lithography or Pulsed-NIL is a technique based on the use of stamps with an heating layer integrated beneath the nanopatterned surface.
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Nanoimprint lithography is a simple pattern transfer process that is neither limited by diffraction nor scattering effects nor secondary electrons, and does not require any sophisticated radiation chemistry.
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