PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region.
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PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region.
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PIN photoP-i-n diode was invented by Jun-Ichi Nishizawa and his colleagues in 1950.
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PIN P-i-n diode operates under what is known as high-level injection.
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PIN P-i-n diode obeys the standard P-i-n diode equation for low-frequency signals.
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The P-I-N diode has a relatively large stored charge adrift in a thick intrinsic region.
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The time required to sweep the stored charge from a P-i-n diode junction is its reverse recovery time, and it is relatively long in a PIN P-i-n diode.
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Under a forward bias of 1 mA, a typical PIN P-i-n diode will have an RF resistance of about, making it a good conductor of RF.
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PIN P-i-n diode switches are used not only for signal selection, but component selection.
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At high frequencies, the PIN P-i-n diode appears as a resistor whose resistance is an inverse function of its forward current.
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Consequently, PIN P-i-n diode can be used in some variable attenuator designs as amplitude modulators or output leveling circuits.
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PIN photoP-i-n diode was invented by Jun-ichi Nishizawa and his colleagues in 1950.
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