44 Facts About Pseudostatic RAM

Unlike flash memory, DPseudostatic RAM is volatile memory, since it loses its data quickly when power is removed.

DPseudostatic RAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DPseudostatic RAM memory cells.

DPseudostatic RAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required.

One of the largest applications for DPseudostatic RAM is the main memory in modern computers and graphics cards .

In contrast, SPseudostatic RAM, which is faster and more expensive than DPseudostatic RAM, is typically used where speed is of greater concern than cost and size, such as the cache memories in processors.

Related searches

MOS DPseudostatic RAM chips were commercialized in 1969 by Advanced Memory system, Inc of Sunnyvale, CA.

The first commercial SDPseudostatic RAM chip was the Samsung KM48SL2000, which had a capacity of 16Mb, and was introduced in 1992.

DPseudostatic RAM is usually arranged in a rectangular array of charge storage cells consisting of one capacitor and transistor per data bit.

Some DPseudostatic RAM matrices are many thousands of cells in height and width.

Under some conditions, most of the data in DPseudostatic RAM can be recovered even if the DPseudostatic RAM has not been refreshed for several minutes.

When such a Pseudostatic RAM is accessed by clocked logic, the times are generally rounded up to the nearest clock cycle.

Each bit of data in a DPseudostatic RAM is stored as a positive or negative electrical charge in a capacitive structure.

Up until the mid-1980s, the capacitors in DPseudostatic RAM cells were co-planar with the access transistor, thus they were referred to as planar capacitors.

DPseudostatic RAM cells featuring capacitors above the substrate are referred to as stacked or folded plate capacitors.

One-transistor, zero-capacitor DPseudostatic RAM cell has been a topic of research since the late-1990s.

Refreshing of cells remains necessary, but unlike with 1T1C DPseudostatic RAM, reads in 1T DPseudostatic RAM are non-destructive; the stored charge causes a detectable shift in the threshold voltage of the transistor.

DPseudostatic RAM cells are laid out in a regular rectangular, grid-like pattern to facilitate their control and access via wordlines and bitlines.

DPseudostatic RAM cell area is given as n F, where n is a number derived from the DPseudostatic RAM cell design, and F is the smallest feature size of a given process technology.

Bitline length is limited by the amount of operating current the DPseudostatic RAM can draw and by how power can be dissipated, since these two characteristics are largely determined by the charging and discharging of the bitline.

Besides ensuring that the lengths of the bitlines and the number of attached DPseudostatic RAM cells attached to them are equal, two basic architectures to array design have emerged to provide for the requirements of the sense amplifiers: open and folded bitline arrays.

Under some conditions most of the data in DPseudostatic RAM can be recovered even if it has not been refreshed for several minutes.

Dynamic Pseudostatic RAM ICs are usually packaged in molded epoxy cases, with an internal lead frame for interconnections between the silicon die and the package leads.

DPseudostatic RAM that is integrated into an integrated circuit designed in a logic-optimized process is called embedded DPseudostatic RAM .

An asynchronous DPseudostatic RAM chip has power connections, some number of address inputs, and a few bidirectional data lines.

Page mode DPseudostatic RAM is a minor modification to the first-generation DPseudostatic RAM IC interface which improved the performance of reads and writes to a row by avoiding the inefficiency of precharging and opening the same row repeatedly to access a different column.

Related searches

Page mode DPseudostatic RAM was later improved with a small modification which further reduced latency.

In page mode DPseudostatic RAM, was asserted before the column address was supplied.

Fast page mode DPseudostatic RAM was introduced in 1986 and was used with Intel 80486.

Single-cycle EDO DPseudostatic RAM became very popular on video cards towards the end of the 1990s.

Synchronous dynamic Pseudostatic RAM significantly revises the asynchronous memory interface, adding a clock line.

Single data rate SDPseudostatic RAM is the original generation of SDPseudostatic RAM; it made a single transfer of data per clock cycle.

Double data rate SDPseudostatic RAM was a later development of SDPseudostatic RAM, used in PC memory beginning in 2000.

Video DPseudostatic RAM is a dual-ported variant of DPseudostatic RAM that was once commonly used to store the frame-buffer in some graphics adaptors.

Window DPseudostatic RAM is a variant of VPseudostatic RAM that was once used in graphics adaptors such as the Matrox Millennium and ATI 3D Rage Pro.

WPseudostatic RAM was designed to perform better and cost less than VPseudostatic RAM.

Multibank DPseudostatic RAM is a type of specialized DPseudostatic RAM developed by MoSys.

MDPseudostatic RAM allows operations to two banks in a single clock cycle, permitting multiple concurrent accesses to occur if the accesses were independent.

MDPseudostatic RAM was primarily used in graphic cards, such as those featuring the Tseng Labs ET6x00 chipsets.

Synchronous graphics Pseudostatic RAM is a specialized form of SDPseudostatic RAM for graphics adaptors.

Graphics double data rate SDPseudostatic RAM is a type of specialized DDR SDPseudostatic RAM designed to be used as the main memory of graphics processing units .

GDDR SDPseudostatic RAM is distinct from commodity types of DDR SDPseudostatic RAM such as DDR3, although they share some core technologies.

Pseudostatic RAM is dynamic RAM with built-in refresh and address-control circuitry to make it behave similarly to static RAM .

PSPseudostatic RAM is used in the Apple iPhone and other embedded systems such as XFlar Platform.

Cypress Semiconductor's HyperPseudostatic RAM is a type of PSPseudostatic RAM supporting a JEDEC-compliant 8-pin HyperBus or Octal xSPI interface.