Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code.
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Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code.
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In today's technology, random-access memory takes the form of integrated circuit chips with MOS memory cells.
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Commercial MOS Random-access memory, based on MOS transistors, was developed in the late 1960s, and has since been the basis for all commercial semiconductor Random-access memory.
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Synchronous dynamic random-access memory later debuted with the Samsung KM48SL2000 chip in 1992.
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Drum Random-access memory could be expanded at relatively low cost but efficient retrieval of Random-access memory items required knowledge of the physical layout of the drum to optimize speed.
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Magnetic-core Random-access memory was invented in 1947 and developed up until the mid-1970s.
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Semiconductor Random-access memory began in the 1960s with bipolar Random-access memory, which used bipolar transistors.
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An integrated bipolar static random-access memory was invented by Robert H Norman at Fairchild Semiconductor in 1963.
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SRAM became an alternative to magnetic-core Random-access memory, but required six MOS transistors for each bit of data.
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Dynamic random-access memory allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility.
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Toshiba's Toscal BC-1411 electronic calculator, which was introduced in 1965, used a form of capacitive bipolar DRAM, storing 180-bit data on discrete Random-access memory cells, consisting of germanium bipolar transistors and capacitors.
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The Random-access memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0 .
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In SRAM, the Random-access memory cell is a type of flip-flop circuit, usually implemented using FETs.
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Many computer systems have a Random-access memory hierarchy consisting of processor registers, on-die SRAM caches, external caches, DRAM, paging systems and virtual Random-access memory or swap space on a hard drive.
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The overall goal of using a Random-access memory hierarchy is to obtain the highest possible average access performance while minimizing the total cost of the entire Random-access memory system .
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The ROM chip is then disabled while the initialized Random-access memory locations are switched in on the same block of addresses .
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