17 Facts About Random-access memory

1.

Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code.

FactSnippet No. 1,197,056
2.

In today's technology, random-access memory takes the form of integrated circuit chips with MOS memory cells.

FactSnippet No. 1,197,057
3.

Commercial MOS Random-access memory, based on MOS transistors, was developed in the late 1960s, and has since been the basis for all commercial semiconductor Random-access memory.

FactSnippet No. 1,197,058
4.

Synchronous dynamic random-access memory later debuted with the Samsung KM48SL2000 chip in 1992.

FactSnippet No. 1,197,059
5.

Drum Random-access memory could be expanded at relatively low cost but efficient retrieval of Random-access memory items required knowledge of the physical layout of the drum to optimize speed.

FactSnippet No. 1,197,060

Related searches

MOS memory Samsung DRAM SDRAM ROM
6.

Magnetic-core Random-access memory was invented in 1947 and developed up until the mid-1970s.

FactSnippet No. 1,197,061
7.

Semiconductor Random-access memory began in the 1960s with bipolar Random-access memory, which used bipolar transistors.

FactSnippet No. 1,197,062
8.

An integrated bipolar static random-access memory was invented by Robert H Norman at Fairchild Semiconductor in 1963.

FactSnippet No. 1,197,063
9.

SRAM became an alternative to magnetic-core Random-access memory, but required six MOS transistors for each bit of data.

FactSnippet No. 1,197,064
10.

Dynamic random-access memory allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility.

FactSnippet No. 1,197,065
11.

Toshiba's Toscal BC-1411 electronic calculator, which was introduced in 1965, used a form of capacitive bipolar DRAM, storing 180-bit data on discrete Random-access memory cells, consisting of germanium bipolar transistors and capacitors.

FactSnippet No. 1,197,066
12.

The first commercial DDR SDRAM Random-access memory chip was Samsung's 64Mbit DDR SDRAM chip, released in June 1998.

FactSnippet No. 1,197,067
13.

The Random-access memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0 .

FactSnippet No. 1,197,068
14.

In SRAM, the Random-access memory cell is a type of flip-flop circuit, usually implemented using FETs.

FactSnippet No. 1,197,069
15.

Many computer systems have a Random-access memory hierarchy consisting of processor registers, on-die SRAM caches, external caches, DRAM, paging systems and virtual Random-access memory or swap space on a hard drive.

FactSnippet No. 1,197,070
16.

The overall goal of using a Random-access memory hierarchy is to obtain the highest possible average access performance while minimizing the total cost of the entire Random-access memory system .

FactSnippet No. 1,197,071
17.

The ROM chip is then disabled while the initialized Random-access memory locations are switched in on the same block of addresses .

FactSnippet No. 1,197,072