18 Facts About CMOS sensor

At RCA Laboratories, a research team including Paul K Weimer, W S Pike and G Sadasiv in 1969 proposed a solid-state image sensor with scanning circuits using thin-film transistors, with photoconductive film used for the photodetector.

The MOS passive-pixel CMOS sensor used just a simple switch in the pixel to read out the photodiode integrated charge.

CMOS sensor created sensor arrays with active MOS readout amplifiers per pixel, in essentially the modern three-transistor configuration: the buried photodiode-structure, selection transistor and MOS amplifier.

The term active pixel CMOS sensor was coined by Nakamura while working on the CMD active-pixel CMOS sensor at Olympus.

Between 1988 and 1991, Toshiba developed the "double-gate floating surface transistor" CMOS sensor, which had a lateral APS structure, with each pixel containing a buried-channel MOS photogate and a PMOS output amplifier.

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Between 1989 and 1992, Canon developed the base-stored image CMOS sensor, which used a vertical APS structure similar to the Olympus CMOS sensor, but with bipolar transistors rather than MOSFETs.

In 1991, Texas Instruments developed the bulk CMD CMOS sensor, which was fabricated at the company's Japanese branch and had a vertical APS structure similar to the Olympus CMD CMOS sensor, but was more complex and used PMOS rather than NMOS transistors.

Fossum, who worked at JPL, led the development of an image CMOS sensor that used intra-pixel charge transfer along with an in-pixel amplifier to achieve true correlated double sampling and low temporal noise operation, and on-chip circuits for fixed-pattern noise reduction.

CMOS sensor published an extensive 1993 article predicting the emergence of APS imagers as the commercial successor of CCDs.

CMOS sensor classified two types of APS structures, the lateral APS and the vertical APS.

CMOS sensor gave an overview of the history of APS technology, from the first APS sensors in Japan to the development of the CMOS sensor at JPL.

The early CMOS sensor market was initially led by American manufacturers such as Micron, and Omnivision, allowing the United States to briefly recapture a portion of the overall image sensor market from Japan, before the CMOS sensor market eventually came to be dominated by Japan, South Korea and China.

In recent years, the CMOS sensor technology has spread to medium-format photography with Phase One being the first to launch a medium format digital back with a Sony-built CMOS sensor.

CMOS sensor patented the first CMOS image sensor for inter-oral dental X-rays with clipped corners for better patient comfort.

HV-CMOS sensor are typically implemented by ~10 µm deep n-doped depletion zone of a transistor on a p-type wafer substrate.

Primary advantage of a CMOS sensor is that it is typically less expensive to produce than a CCD sensor, as the image capturing and image sensing elements can be combined onto the same IC, with simpler construction required.

Active circuitry in CMOS pixels takes some area on the surface which is not light-sensitive, reducing the photon-detection efficiency of the device .

Size of the pixel CMOS sensor is often given in height and width, but in the optical format.