CComplementary MOS technology is used for constructing integrated circuit chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits.
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25 Facts About Complementary MOS
2.
CComplementary MOS technology is used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.
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3.
Complementary MOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the Conference the next year in 1963.
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4.
Two important characteristics of CComplementary MOS devices are high noise immunity and low static power consumption.
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5.
Consequently, CComplementary MOS devices do not produce as much waste heat as other forms of logic, like NComplementary MOS logic or transistor–transistor logic, which normally have some standing current even when not changing state.
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6.
Complementary MOS invented complementary flip-flop and inverter circuits, but did no work in a more complex complementary logic.
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7.
Complementary MOS was the first person able to put p-channel and n-channel TFTs in a circuit on the same substrate.
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8.
In both the research paper and the patent filed by Wanlass, the fabrication of CComplementary MOS devices was outlined, on the basis of thermal oxidation of a silicon substrate to yield a layer of silicon dioxide located between the drain contact and the source contact.
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9.
CComplementary MOS technology was initially overlooked by the American semiconductor industry in favour of NComplementary MOS, which was more powerful at the time.
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10.
However, CComplementary MOS was quickly adopted and further advanced by Japanese semiconductor manufacturers due to its low power consumption, leading to the rise of the Japanese semiconductor industry.
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12.
However, CComplementary MOS processors did not become dominant until the 1980s.
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13.
CComplementary MOS circuits are constructed in such a way that all P-type metal–oxide–semiconductor transistors must have either an input from the voltage source or from another PComplementary MOS transistor.
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14.
The composition of a PComplementary MOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied.
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15.
Power supply pins for CComplementary MOS are called VDD and VSS, or VCC and Ground depending on the manufacturer.
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16.
NComplementary MOS logic dissipates power whenever the transistor is on, because there is a current path from Vdd to Vss through the load resistor and the n-type network.
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17.
Static CComplementary MOS gates are very power efficient because they dissipate nearly zero power when idle.
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18.
Broadly classifying, power dissipation in CComplementary MOS circuits occurs because of two components, static and dynamic:.
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19.
CComplementary MOS technology is widely used for RF circuits all the way to microwave frequencies, in mixed-signal applications.
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20.
RF CComplementary MOS refers to RF circuits which are based on mixed-signal CComplementary MOS integrated circuit technology.
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21.
RF CComplementary MOS was developed by Asad Abidi while working at UCLA in the late 1980s.
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22.
RF CComplementary MOS circuits are widely used to transmit and receive wireless signals, in a variety of applications, such as satellite technology, bluetooth, Wi-Fi, near-field communication, mobile networks, terrestrial broadcast, and automotive radar applications, among other uses.
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23.
Commercial RF CComplementary MOS products are used for Bluetooth and Wireless LAN networks.
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25.
RF CComplementary MOS technology is crucial to modern wireless communications, including wireless networks and mobile communication devices.
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