SStatic RAM is volatile memory; data is lost when power is removed.
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SStatic RAM is volatile memory; data is lost when power is removed.
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Semiconductor bipolar SStatic RAM was invented in 1963 by Robert Norman at Fairchild Semiconductor.
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MOS SStatic RAM was invented in 1964 by John Schmidt at Fairchild Semiconductor.
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SStatic RAM was the main driver behind any new CMOS-based technology fabrication process since 1959 when CMOS was invented.
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SStatic RAM offers a simple data access model and does not require a refresh circuit.
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Since SStatic RAM requires more transistors per bit to implement, it is less dense and more expensive than DStatic RAM and has a higher power consumption during read or write access.
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SStatic RAM was used for the main memory of most early personal computers such as the ZX80, TRS-80 Model 100 and Commodore VIC-20.
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Non-volatile SStatic RAM has standard SStatic RAM functionality, but they save the data when the power supply is lost, ensuring preservation of critical information.
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Pseudostatic RAM has a DRAM storage core, combined with a self refresh circuit.
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Therefore, SStatic RAM memory is mainly used for CPU cache, small on-chip memory, FIFOs or other small buffers.
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Typical SStatic RAM cell is made up of six MOSFETs, and is often called a 6T SStatic RAM cell.
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Four-transistor SStatic RAM is quite common in stand-alone SStatic RAM devices, implemented in special processes with an extra layer of polysilicon, allowing for very high-resistance pull-up resistors.
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An SStatic RAM cell has three different states: standby, reading or writing .
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SStatic RAM operating in read and write modes should have "readability" and "write stability", respectively.
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Some SStatic RAM cells have a "page mode", where words of a page can be read sequentially with a significantly shorter access time .
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