17 Facts About Active-pixel sensor

An active-pixel sensor is an image sensor where each pixel sensor unit cell has a photodetector and one or more active transistors.

At RCA Laboratories, a research team including Paul K Weimer, W S Pike and G Sadasiv in 1969 proposed a solid-state image sensor with scanning circuits using thin-film transistors, with photoconductive film used for the photodetector.

The MOS passive-pixel Active-pixel sensor used just a simple switch in the pixel to read out the photodiode integrated charge.

Active-pixel sensor created sensor arrays with active MOS readout amplifiers per pixel, in essentially the modern three-transistor configuration: the buried photodiode-structure, selection transistor and MOS amplifier.

The term active pixel sensor was coined by Nakamura while working on the CMD active-pixel sensor at Olympus.

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Between 1988 and 1991, Toshiba developed the "double-gate floating surface transistor" Active-pixel sensor, which had a lateral APS structure, with each pixel containing a buried-channel MOS photogate and a PMOS output amplifier.

Between 1989 and 1992, Canon developed the base-stored image Active-pixel sensor, which used a vertical APS structure similar to the Olympus Active-pixel sensor, but with bipolar transistors rather than MOSFETs.

In 1991, Texas Instruments developed the bulk CMD Active-pixel sensor, which was fabricated at the company's Japanese branch and had a vertical APS structure similar to the Olympus CMD Active-pixel sensor, but was more complex and used PMOS rather than NMOS transistors.

Fossum, who worked at JPL, led the development of an image Active-pixel sensor that used intra-pixel charge transfer along with an in-pixel amplifier to achieve true correlated double sampling and low temporal noise operation, and on-chip circuits for fixed-pattern noise reduction.

Active-pixel sensor published an extensive 1993 article predicting the emergence of APS imagers as the commercial successor of CCDs.

Active-pixel sensor classified two types of APS structures, the lateral APS and the vertical APS.

Active-pixel sensor gave an overview of the history of APS technology, from the first APS sensors in Japan to the development of the CMOS sensor at JPL.

Many other small image Active-pixel sensor companies sprang to life shortly thereafter due to the accessibility of the CMOS process and all quickly adopted the active pixel Active-pixel sensor approach.

In recent years, the CMOS Active-pixel sensor technology has spread to medium-format photography with Phase One being the first to launch a medium format digital back with a Sony-built CMOS Active-pixel sensor.

Active-pixel sensor patented the first CMOS image sensor for inter-oral dental X-rays with clipped corners for better patient comfort.

Primary advantage of a CMOS Active-pixel sensor is that it is typically less expensive to produce than a CCD Active-pixel sensor, as the image capturing and image sensing elements can be combined onto the same IC, with simpler construction required.

Size of the pixel Active-pixel sensor is often given in height and width, but in the optical format.