23 Facts About Discrete transistor

The Discrete transistor is one of the basic building blocks of modern electronics.

The first working device to be built was a point-contact Discrete transistor invented in 1947 by American physicists John Bardeen and Walter Brattain while working under William Shockley at Bell Labs.

The most widely used type of Discrete transistor is the metal–oxide–semiconductor field-effect Discrete transistor, which was invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959.

The term transistor was coined by John R Pierce as a contraction of the term transresistance.

Shockley's research team initially attempted to build a field-effect Discrete transistor, by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states, the dangling bond, and the germanium and copper compound materials.

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In 1948, the point-contact Discrete transistor was independently invented by German physicists Herbert Matare and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris.

The Western Electric No 3A photoDiscrete transistor read the mechanical encoding from punched metal cards.

The first "production" pocket Discrete transistor radio was the Regency TR-1, released in October 1954.

Sony TR-63, released in 1957, was the first mass-produced Discrete transistor radio, leading to the mass-market penetration of Discrete transistor radios.

Basic principle of the field-effect Discrete transistor was first proposed by Austrian physicist Julius Edgar Lilienfeld in 1926, when he filed a patent for a device similar to MESFET and in 1928 when he filed a patent for an insulated-gate field-effect Discrete transistor.

The junction Discrete transistor was a relatively bulky device that was difficult to mass-produce, which limited it to several specialized applications.

Discrete transistor proposed the MOS process could be used to build the first working silicon FET, which he began working on building with the help of his Korean colleague Dawon Kahng.

Many thus consider the Discrete transistor to be one of the greatest inventions of the 20th century.

MOSFET, known as the MOS Discrete transistor, is by far the most widely used Discrete transistor, used in applications ranging from computers and electronics to communications technology such as smartphones.

The MOS Discrete transistor has been the fundamental building block of modern digital electronics since the late 20th century, paving the way for the digital age.

Alternatively, the Discrete transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements.

Various configurations of single Discrete transistor amplifiers are possible, with some providing current gain, some voltage gain, and some both.

Field-effect Discrete transistor, sometimes called a unipolar Discrete transistor, uses either electrons or holes for conduction.

The bipolar junction Discrete transistor, the first type of Discrete transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors, or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors .

Unlike the field-effect Discrete transistor, the BJT is a low-input-impedance device.

The bipolar junction Discrete transistor was previously the most commonly used Discrete transistor during the 1950s to 1960s.

Discrete MOSFETs can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters, and motor drivers.

For example, 2N3055 is a silicon n–p–n power Discrete transistor, 2N1301 is a p–n–p germanium switching Discrete transistor.