Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility.
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14 Facts About Ferroelectric RAM
2.
FeFerroelectric RAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.
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3.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952.
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4.
The earliest known commercial product to use FeFerroelectric RAM is Sony's PlayStation 2 Memory Card, released in 2000.
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5.
Major modern FeFerroelectric RAM manufacturer is Ramtron, a fabless semiconductor company.
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6.
Ferroelectric RAM material has a nonlinear relationship between the applied electric field and the apparently stored charge.
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7.
Since this process overwrites the cell, reading FeFerroelectric RAM is a destructive process, and requires the cell to be re-written.
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8.
In general, the operation of FeFerroelectric RAM is similar to ferrite core memory, one of the primary forms of computer memory in the 1960s.
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9.
However, compared to core memory, FeFerroelectric RAM requires far less power to flip the state of the polarity and does so much faster.
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10.
In contrast, FeFerroelectric RAM only requires power when actually reading or writing a cell.
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11.
Cypress Semiconductor's F-Ferroelectric RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths .
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12.
DFerroelectric RAM performance is limited by the rate at which the charge stored in the cells can be drained or stored .
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13.
FeFerroelectric RAM remains a relatively small part of the overall semiconductor market.
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14.
Texas Instruments proved it to be possible to embed FeFerroelectric RAM cells using two additional masking steps during conventional CMOS semiconductor manufacture.
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